REGULATING THE BAND GAPS OF SEVEN STACKING PATTERNS OF BILAYER HEXAGONAL BORON NITRIDES BY DOPING CARBON ATOMS IN OPPOSITE SITES

Regulating the band gaps of seven stacking patterns of bilayer hexagonal boron nitrides by doping carbon atoms in opposite sites

The band gaps of seven stacking patterns of bilayer hexagonal boron nitrides(h-BNs) are regulated by changing the doping positions of carbon atoms using density functional theory calculations.The calculation results dwell on that the AA1 stacking pattern h-BN Outdoor has the largest band gap among seven stacking patterns of h-BNs.The influences of

read more